• DocumentCode
    51220
  • Title

    Monolithically integrated wavelength-multiplexed DFB laser array with laterally coupled quarter-wave phase-shift gratings defined by interference lithography

  • Author

    Jingsi Li ; Julian Cheng

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Texas at Austin, Austin, TX, USA
  • Volume
    50
  • Issue
    18
  • fYear
    2014
  • fDate
    August 28 2014
  • Firstpage
    1303
  • Lastpage
    1305
  • Abstract
    The first monolithically integrated laterally coupled, multi-wavelength distributed feedback (DFB) laser array using first-order sidewall sampled gratings with equivalent quarter-wave phase shifts defined by interference lithography is experimentally demonstrated. The elements of the monolithic DFB laser array lase strongly monomode, with an average side mode suppression ratio of ~37.3 dB and with a uniform wavelength spacing of ~7.3 nm. The output power under 100 mA bias current ranges from 11.4 to 14.1 mW. The proposed method offers a practical and low-cost method for the fabrication of multi-wavelength monolithic DFB laser arrays without regrowth or e-beam lithography.
  • Keywords
    diffraction gratings; distributed feedback lasers; light interference; optical retarders; photolithography; semiconductor laser arrays; DFB laser array; SMSR; bias current; interference lithography; laterally coupled quarter-wave phase-shift gratings; monolithically integrated wavelength-multiplexing; power 11.4 mW to 14.1 mW; side mode suppression ratio; wavelength spacing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2014.2118
  • Filename
    6888574