DocumentCode
51220
Title
Monolithically integrated wavelength-multiplexed DFB laser array with laterally coupled quarter-wave phase-shift gratings defined by interference lithography
Author
Jingsi Li ; Julian Cheng
Author_Institution
Dept. of Electr. Eng., Univ. of Texas at Austin, Austin, TX, USA
Volume
50
Issue
18
fYear
2014
fDate
August 28 2014
Firstpage
1303
Lastpage
1305
Abstract
The first monolithically integrated laterally coupled, multi-wavelength distributed feedback (DFB) laser array using first-order sidewall sampled gratings with equivalent quarter-wave phase shifts defined by interference lithography is experimentally demonstrated. The elements of the monolithic DFB laser array lase strongly monomode, with an average side mode suppression ratio of ~37.3 dB and with a uniform wavelength spacing of ~7.3 nm. The output power under 100 mA bias current ranges from 11.4 to 14.1 mW. The proposed method offers a practical and low-cost method for the fabrication of multi-wavelength monolithic DFB laser arrays without regrowth or e-beam lithography.
Keywords
diffraction gratings; distributed feedback lasers; light interference; optical retarders; photolithography; semiconductor laser arrays; DFB laser array; SMSR; bias current; interference lithography; laterally coupled quarter-wave phase-shift gratings; monolithically integrated wavelength-multiplexing; power 11.4 mW to 14.1 mW; side mode suppression ratio; wavelength spacing;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2014.2118
Filename
6888574
Link To Document