Prospects of wide band gap material ZB-GaN over low band gap GaAs-based IMPATT Devices

Author

Tripathy, P.R. ; Panda, A.K. ; Pati, S.P.

Author_Institution

Dept. of Electron. & Telecommun. Eng., Purushottam Inst. of Eng. & Technol., Rourkela, India

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

1

Lastpage

4

Abstract

Results of computer aided studies on mm-wave performance of GaAs (narrow band gap, E_g= 1.42 eV) and zinc-blende (ZB) phase GaN (wide band gap, E_g= 3.2 eV) double drift IMPATT diode for frequencies of operation in the range of 35 to 140 GHz indicate avalanche breakdown at very high electric field for ZB-GaN diode with exhibition of seven times higher breakdown voltage for ZB-GaN (331 V) compared to GaAs (45.4 V) making it possible to realize high RF power. However the values of device efficiency and value of diode negative resistance remains high for GaAs diodes.

Keywords

III-V semiconductors; IMPATT diodes; avalanche breakdown; electrical resistivity; gallium arsenide; gallium compounds; millimetre wave diodes; semiconductor device breakdown; wide band gap semiconductors; GaAs; GaN; IMPATT devices; avalanche breakdown; band gap; device efficiency; double drift IMPATT diode; frequency 35 GHz to 140 GHz; high RF power; negative resistance; voltage 331 V; voltage 45.4 V; wide band gap material; zinc-blende phase; Avalanche breakdown; Diodes; Electric resistance; Gallium arsenide; Gallium nitride; High performance computing; Narrowband; Photonic band gap; Radio frequency; Wideband; Double Drift Diode; GaAs; Impatt; RF power; Zinc-blende GaN;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4244-5073-2

Type

conf

Filename

5407074