Title :
Ge/SiGe RCE photodetectors : A comparative study based on Franz-Keldysh Effect and Quantum Confined Stark Effect
Author :
Sen, Gopa ; Mukhopadhyay, Bratati ; Basu, P.K.
Author_Institution :
Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India
Abstract :
Si-based photodetectors are currently studied for providing cheap solution to long haul and short distance communication and optical interconnects. Tensile strained Ge layers grown with suitable barriers show direct gap type I band alignment. We have worked on resonant cavity enhanced (RCE) photodetectors using Ge/SiGe type I structure. Performance of photodetectors using strong quntum confined Stark effect, and Franz-Keldysh Effect in these structures and properties related to photodetection are studied in this paper.
Keywords :
Ge-Si alloys; germanium; optical resonators; photodetectors; quantum confined Stark effect; Franz-Keldysh effect; Ge-SiGe; RCE photodetector; band alignment; quantum confined Stark effect; resonant cavity enhanced photodetector; type I structure; Absorption; Detectors; Germanium silicon alloys; Indium gallium arsenide; Photodetectors; Potential well; Quantum computing; Quantum well devices; Silicon germanium; Stark effect; FKE; MQW; QCSE; electroabsorption; electrorefraction; exciton;
Conference_Titel :
Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4244-5073-2
