Title :
Calculation of gain in GaAlAs/GaAs superlattice laser due to intersubband longitudinal optic (lo) phonon transitions
Author :
Banerjee, A. ; Mukhopadhyay, S. ; Ghoshal, A.
Author_Institution :
Inst. of Radio Phys. & Electron., Calcutta Univ., Kolkata, India
Abstract :
We have calculated the gain in GaAlAs/GaAs superlattice laser taking into account the intersubband transitions of electrons via longitudinal optic ( lo) phonons. The lo phonons are treated by the dispersive continuum model. Gain variation with the well-width is studied considering both superlattice and bulk phonon model. The electron mobility is calculated and its variation with well-width is also studied. Comparison of the results has been exhibited for both the superlattice and bulk phonons.
Keywords :
III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; gallium compounds; laser beams; laser modes; laser transitions; semiconductor lasers; semiconductor superlattices; GaAlAs-GaAs; bulk phonon; dispersive continuum model; electron mobility; gain variation; intersubband longitudinal optic phonon transition; lo phonons; superlattice laser; Dispersion; Electron mobility; Electron optics; Gallium arsenide; Laser modes; Laser transitions; Optical refraction; Optical superlattices; Optical variables control; Phonons; Intersubband transitions; longitudinal optic (lo) phonons; superlattice laser;
Conference_Titel :
Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4244-5073-2
