RF performance of process-induced strain-engineered n-FinFET

Author

Sengupta, M. ; Chattopadhyay, S. ; Maiti, C.K.

Author_Institution

Dept. of Electron. Sci., Univ. of Calcutta, Kolkata, India

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

1

Lastpage

4

Abstract

In this paper we have simulated and studied stress proximity technique for an n-FinFET using three dimensional process/device simulation. The process-induced strain-engineered n-FinFET showed cut-off frequency and maximum oscillation frequency up to 351 GHz, and 537 GHz respectively. Voltage-gain bandwidth up to 352 GHz for a process-induced strain engineered n-FinFET is reported for the first time.

Keywords

MOSFET; computational complexity; semiconductor device models; submillimetre wave circuits; RF performance; bandwidth 352 GHz; cut-off frequency; device simulation; frequency 351 GHz; frequency 537 GHz; maximum oscillation frequency; process-induced strain-engineered n-FinFET; stress proximity technique; three dimensional process; voltage-gain bandwidth; Bandwidth; Capacitive sensors; Computational modeling; Computer simulation; Cutoff frequency; FinFETs; MOSFET circuits; Radio frequency; Stress; Voltage; Process-induced strain; cut-off frequency; maximum oscillation frequency; voltage-gain bandwidth;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4244-5073-2

Type

conf

Filename

5407196