Analysis of noise performance and its temperature dependence for an In0.10Ga0.90Sb avalanche photodiode

Noise performance of an InGaSb avalanche photodiode (APD) with 10% indium fraction has been studied at two temperature levels to explore the feasibility of using this device in an advanced photo-receiver system for mid-infrared wavelengths. Simulation results show that, optimum gain increases from 2.5 at room temperature to 3.2 at 90°C. Although this device exhibits slightly better noise performance at optimum gain in room temperature, at high gain values, performance of the device remains unchanged with increasing temperature. Even at higher temperature, the performance of the InGaSb APD is satisfactory for potential applications in optoelectronic integrated circuit in mid-infrared region.