Calculating the Signal to Noise ratio of a RCE Ge-based Schottky Photodetector

Author

Dutta, Himadri Sekhar ; Das, N.R.

Author_Institution

Chowdhury Sch. of IT, CU, India

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

1

Lastpage

4

Abstract

In this paper, signal to noise ratio (S/N) of a Geon-Si Resonant Cavity Encapsulated Schottky Photodetector has been calculated. The noise equivalent bandwidth (NEB) and different noise currents have been formulated and computed. The calculation has been done considering the trapping of carriers at the Si/Ge heterointerfaces. The noise Results show that the effect of interface trapping of holes plays a significant role on the noise equivalent bandwidth of the photodetector at low-bias.

Keywords

Ge-Si alloys; Schottky barriers; cavity resonators; elemental semiconductors; hole traps; photodetectors; semiconductor device noise; RCE Ge-based Schottky photodetector; Si-Ge; carrier trapping; heterointerfaces; hole interface trapping; noise currents; noise equivalent bandwidth; resonant cavity encapsulated Schottky photodetector; signal-to-noise ratio; 1f noise; Bandwidth; Detectors; Optical films; Optical noise; Photodetectors; Resonance; Semiconductor device noise; Signal detection; Signal to noise ratio; 3-dB bandwidth; Frequency response; Noise Equivalent Bandwidth; Resonant Cavity Encapsulated; Schottky Photodetector; Signal to Noise ratio;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4244-5073-2

Type

conf

Filename

5407207