Title :
Calculating the Signal to Noise ratio of a RCE Ge-based Schottky Photodetector
Author :
Dutta, Himadri Sekhar ; Das, N.R.
Author_Institution :
Chowdhury Sch. of IT, CU, India
Abstract :
In this paper, signal to noise ratio (S/N) of a Geon-Si Resonant Cavity Encapsulated Schottky Photodetector has been calculated. The noise equivalent bandwidth (NEB) and different noise currents have been formulated and computed. The calculation has been done considering the trapping of carriers at the Si/Ge heterointerfaces. The noise Results show that the effect of interface trapping of holes plays a significant role on the noise equivalent bandwidth of the photodetector at low-bias.
Keywords :
Ge-Si alloys; Schottky barriers; cavity resonators; elemental semiconductors; hole traps; photodetectors; semiconductor device noise; RCE Ge-based Schottky photodetector; Si-Ge; carrier trapping; heterointerfaces; hole interface trapping; noise currents; noise equivalent bandwidth; resonant cavity encapsulated Schottky photodetector; signal-to-noise ratio; 1f noise; Bandwidth; Detectors; Optical films; Optical noise; Photodetectors; Resonance; Semiconductor device noise; Signal detection; Signal to noise ratio; 3-dB bandwidth; Frequency response; Noise Equivalent Bandwidth; Resonant Cavity Encapsulated; Schottky Photodetector; Signal to Noise ratio;
Conference_Titel :
Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4244-5073-2
