Drain current vs. drain voltage characteristics of nanoscale 2D GaAs MOSFETs

The variations of drain current (I_D) with drain voltages (VD) at different temperatures, namely, 27 K, 50 K and 77 K are computed for a two dimensional 10 nm GaAs MOSFET. A displaced Maxwellian model is assumed for the electron distribution and the interactions with deformation potential acoustic and polar optic phonons are considered using the analytical expressions based on a momentum conservation approximation. It has been found that I_D is higher at low temperature, compared to that at high temperatures. The variation of mobility with temperature has also been investigated.