Extended wavelength avalanche photodiodes

Author

David, J.P.R. ; Ng, J.S. ; Tan, C.H. ; Goh, Y.L.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

1

Lastpage

4

Abstract

The ability to detect optical signals beyond 1.65 Â¿m is of technological interest for a number of applications. In this work we describe a novel technology that offers considerable promise for high speed, high sensitivity detection in this region utilising avalanche gain. InGaAs/GaAsSb type II superlattices as the absorption region and InAlAs as the multiplication region can be combined to form a separate absorption and multiplication (SAM) avalanche photodiode (APD), all grown lattice matched on InP substrates. Detection at room temperature to beyond 2.4 Â¿m can be readily achieved as can gains in excess of 40.

Keywords

III-V semiconductors; arsenic compounds; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; semiconductor superlattices; InGaAs-GaAsSb; InP; absorption region; avalanche gain; extended wavelength avalanche photodiodes; multiplication region; room temperature; sensitivity detection; temperature 293 K to 298 K; type II superlattices; Absorption; Avalanche photodiodes; High speed optical techniques; Indium compounds; Indium gallium arsenide; Lattices; Optical detectors; Optical sensors; Optical superlattices; Signal detection; InGaAs/GaAsSb; Superlattice; avalanche; infrared; photodiode;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4244-5073-2

Type

conf

Filename

5407220