DocumentCode :
512663
Title :
Effect of shell thickness on exciton and biexciton binding energies in ZnSe/ZnS core/shell quantum dot
Author :
Chattopadhyay, Saikat ; Andrews, J.T. ; Sen, P. ; Sen, Pranay K.
Author_Institution :
Sch. of Phys., Devi Ahilya Univ., Indore, India
fYear :
2009
fDate :
14-16 Dec. 2009
Firstpage :
1
Lastpage :
4
Abstract :
The exciton and biexciton binding energies are calculated for a ZnSe/ZnS core/shell quantum dot incorporating WKB approximation. With the variations in shell thickness, the exciton binding energy shows nonlinear behavior. A maximum value of exciton binding energy is expected to occur for shell thickness equals to the core radius. Similar results are reported for biexcitons where for thicker shells the biexciton attains antibonding. Corresponding to an increase in binding energy, a red shift in the PL spectra is expected which is compatible with the experimental observations.
Keywords :
II-VI semiconductors; WKB calculations; biexcitons; binding energy; photoluminescence; red shift; semiconductor quantum dots; wide band gap semiconductors; zinc compounds; WKB approximation; ZnSe-ZnS; biexciton binding energy; core-shell quantum dot; exciton binding energy; photoluminescence spectra; red shift; shell thickness; Charge carrier processes; Excitons; Nanostructured materials; Nonlinear optics; Passivation; Photonic band gap; Quantum computing; Quantum dots; Semiconductor materials; Zinc compounds; PL spectra; WKB approximation; binding energy; core/shell quantum dots (C/S QDs);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4244-5073-2
Type :
conf
Filename :
5407229
Link To Document :
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