• DocumentCode
    512663
  • Title

    Effect of shell thickness on exciton and biexciton binding energies in ZnSe/ZnS core/shell quantum dot

  • Author

    Chattopadhyay, Saikat ; Andrews, J.T. ; Sen, P. ; Sen, Pranay K.

  • Author_Institution
    Sch. of Phys., Devi Ahilya Univ., Indore, India
  • fYear
    2009
  • fDate
    14-16 Dec. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The exciton and biexciton binding energies are calculated for a ZnSe/ZnS core/shell quantum dot incorporating WKB approximation. With the variations in shell thickness, the exciton binding energy shows nonlinear behavior. A maximum value of exciton binding energy is expected to occur for shell thickness equals to the core radius. Similar results are reported for biexcitons where for thicker shells the biexciton attains antibonding. Corresponding to an increase in binding energy, a red shift in the PL spectra is expected which is compatible with the experimental observations.
  • Keywords
    II-VI semiconductors; WKB calculations; biexcitons; binding energy; photoluminescence; red shift; semiconductor quantum dots; wide band gap semiconductors; zinc compounds; WKB approximation; ZnSe-ZnS; biexciton binding energy; core-shell quantum dot; exciton binding energy; photoluminescence spectra; red shift; shell thickness; Charge carrier processes; Excitons; Nanostructured materials; Nonlinear optics; Passivation; Photonic band gap; Quantum computing; Quantum dots; Semiconductor materials; Zinc compounds; PL spectra; WKB approximation; binding energy; core/shell quantum dots (C/S QDs);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on
  • Conference_Location
    Kolkata
  • Print_ISBN
    978-1-4244-5073-2
  • Type

    conf

  • Filename
    5407229