Dielectric property and breakdown study of metal-insulator-metal capacitor

Author

Hota, M.K. ; Mahata, C. ; Mallik, S. ; Sarkar, C.K. ; Maiti, C.K.

Author_Institution

Electron. & ECE Dept., Indian Inst. of Technol. Kharagpur, Kharagpur, India

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

1

Lastpage

4

Abstract

Advanced metal-insulator-metal capacitors with ultra thin (EOT-2.3-5.3 nm) RF sputter-deposited TaAlO_x dielectric layers having excellent electrical properties have been fabricated. With low FCC value, the small change in quadratic VCC value in hysteresis curve is also found which shows a good stability of MIM capacitor. The Weibull distribution function, which is based on the weakest-link theory, is employed to analyze the effect of EOT on the breakdown of the MIM capacitors.

Keywords

MIM devices; Weibull distribution; capacitors; dielectric hysteresis; dielectric thin films; electric breakdown; sputter deposition; tantalum compounds; FCC value; RF sputter-deposited dielectric layers; TaAlO_x; Weibull distribution function; hysteresis curve; metal-insulator-metal capacitor; quadratic VCC value; size 2.3 nm to 5.3 nm; Atomic layer deposition; Capacitance; Dielectric breakdown; Dielectric constant; Gold; High-K gate dielectrics; Leakage current; MIM capacitors; Radio frequency; Semiconductor films; High-k; Hysteresis; MIM capacitor; TaAlOx; Weibull;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4244-5073-2

Type

conf

Filename

5407236