Title :
Debye temperature of II–VI and III–V semiconductors
Author :
Kumar, V. ; Jha, Vijeta ; Shrivastava, A.K.
Author_Institution :
Dept. of Electron. & Instrum., Indian Sch. of Mines Univ., Dhanbad, India
Abstract :
The Debye temperature (¿D) of II-VI and III-V zincblende semiconductors has been calculated using plasma frequency formalism recently developed for ternary chalcopyrite semiconductors. Four simple relations have been proposed to calculate the values of ¿D. Two are based on plasmon energy (¿p) data and one each on molecular weight (W) and melting temperature (Tm).The calculated values of ¿D are compared with the experimental values and the values reported by different workers. Reasonably good agreement has been obtained between them.
Keywords :
Debye temperature; II-VI semiconductors; III-V semiconductors; melting point; plasmons; Debye temperature; II-VI semiconductors; III-V semiconductors; melting temperature; molecular weight; plasma frequency formalism; plasmon energy; ternary chalcopyrite semiconductors; zincblende semiconductors; Equations; Frequency; III-V semiconductor materials; Lattices; Light emitting diodes; Photovoltaic cells; Plasma temperature; Plasmons; Temperature measurement; Thermal conductivity; Binary tetrahedral semiconductors; Debye temperature; II–VI and III–V semiconductors;
Conference_Titel :
Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4244-5073-2
