Title :
A compact threshold voltage model for narrow channel nano-scale MOSFETs
Author :
Pandit, Srabanti ; Sarkar, Chandan Kumar
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India
Abstract :
This paper presents a compact threshold voltage model for narrow channel MOSFETs for the purpose of VLSI circuit simulation. A nano-scale trench isolated MOSFET has been considered whose gate length and width are in the sub 65 nm regime. The developed model has been validated by comparing the results predicted from the derived model with those obtained using the device simulator of TCAD Sentaurus.
Keywords :
MOS integrated circuits; VLSI; integrated circuit modelling; isolation technology; nanotechnology; technology CAD (electronics); TCAD Sentaurus; VLSI circuit simulation; compact threshold voltage model; device simulator; gate length; nanoscale trench isolation; narrow channel nanoscale MOSFETs; size 65 nm; Analytical models; Circuit simulation; Computational modeling; Gaussian channels; Integrated circuit modeling; MOSFETs; Nanoscale devices; Predictive models; Threshold voltage; Very large scale integration; compact model; edge effect; narrow channel; trench isolated MOSFET;
Conference_Titel :
Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4244-5073-2
