Title :
Indium doped graded channel MOSFET IR medium region (1.5 μm–6.0 μm) detector
Author :
Siswono, Hartono
Author_Institution :
Electr. Eng. Dept., Univ. of Gunadarma, Depok, Indonesia
Abstract :
The GCMOSFET device is used as IR medium region (1.5 μm-6.0 μm) detector. This can be done by using Indium as dopant in the GCMOSFET device. GCMOSFET gives significantly higher drive current than MOSFET: therefore, GCMOSFET needs lower power consumption. This can be achieved because GCMOSFET has shorter effective channel length than MOSFET.
Keywords :
MOSFET; indium; infrared detectors; semiconductor doping; GCMOSFET device; drive current; indium doped graded channel MOSFET IR medium region detector; power consumption; wavelength 1.5 μm to 6 μm; GCMOSFET; IR medium region; Indium; MOSFET; lower power consumption;
Conference_Titel :
Instrumentation, Communications, Information Technology, and Biomedical Engineering (ICICI-BME), 2009 International Conference on
Conference_Location :
Bandung
Print_ISBN :
978-1-4244-4999-6
Electronic_ISBN :
978-1-4244-5000-8
DOI :
10.1109/ICICI-BME.2009.5417265
