• DocumentCode
    513639
  • Title

    Analysis of the Early-Failure Rate Prediction of Time-Dependent-Dielectric Breakdown in Thin Oxides

  • Author

    Ogier, J.L. ; Degraeve, R. ; Roussel, P. ; Groeseneken, G. ; Maes, H.E.

  • Author_Institution
    IMEC, Kapeldreef 75, 3001 Leuven, Belgium
  • fYear
    1995
  • fDate
    25-27 Sept. 1995
  • Firstpage
    299
  • Lastpage
    302
  • Abstract
    The field and area dependence of the defect related TDDB breakdown mode of MOS-capacitors are investigated, in order to predict the failure rate and to determine screening conditions to guarantee a maximum failure rate during the useful life of the oxide. The application of the E and 1/E-model, together with the oxide thinning model for the defect-related breakdown are compared. A new bimodal distribution model is introduced that takes into account the interdependence of the two breakdown modes.
  • Keywords
    Area measurement; Data analysis; Dielectric breakdown; Electric breakdown; Integrated circuit reliability; MOS capacitors; MOS integrated circuits; Predictive models; Stress; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Conference_Location
    The Hague, The Netherlands
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5435880
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513639