DocumentCode
513642
Title
Fast transient ESD simulation of the NMOS protection transistor
Author
Luchies, J.R.M. ; Verhaege ; Kuper, F.G. ; Mouthaan, A.J. ; de Graaff, H.C.
Author_Institution
MESA Research Institute, University of Twente, EL-TN 3.268, P.O. Box 217, NL-7500 AE, Enschede, The Netherlands, tel. +31 53 894007, e-mail: janmarc@ice.el.utwente.nl
fYear
1995
fDate
25-27 Sept. 1995
Firstpage
307
Lastpage
310
Abstract
The protective properties of NMOS transistors for the Charged Device Model have been investigated. With 2D device simulation it is shown that the base transition time is the limiting factor for CDM NMOS transistor protection. An improved compact transistor model accounting for intrinsic base resistance is presented.
Keywords
Bipolar transistors; Circuit simulation; Electronic mail; Electrostatic discharge; MOS devices; MOSFETs; Medical simulation; Protection; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location
The Hague, The Netherlands
Print_ISBN
286332182X
Type
conf
Filename
5435883
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