Early Resistance Change Modelling in Electromigration

A novel model describing resistance curves in terms of material migration through the movement of vacancies and the generation of vacancies and immobile damage, mainly at grain boundaries, due to electrical current flow is presented. It is shown that various measured curves can be well fit. The effects of mechanical stress can also be described. Simulations are shown in bamboo structures (BS) and complex triple point grain boundary structures (CTPGBS). For BS the TRENDY simulator from MESA was used. For CTPGBS a finite element simulation program WVEM developed by TMEC and EDIL and based on the 2-D device simulator PRISM from IMEC has been used.