• DocumentCode
    513644
  • Title

    Application of Device Simulations to Radiation Hardening Studies

  • Author

    Sudre, Christophe ; Dachs, Charles ; de La Rochette, Helene ; Roubaud, Franck ; Bruguier, Guy ; Pelanchon, Frederic ; Palau, Jean-Marie ; Gasiot, Jean

  • Author_Institution
    CEM, Université Montpellier II, 34095 MONTPELLIER cedex 05, France
  • fYear
    1995
  • fDate
    25-27 Sept. 1995
  • Firstpage
    315
  • Lastpage
    319
  • Abstract
    The aim of the device radiation hardening is to reduce the sensitivity of components (military and space applications) to high energy radiations such as X, ¿ and cosmic rays. The main result of the irradiation being the creation of high density electron-hole pairs, time dependent radiation effects can only be simulated by including specific pair generation. This paper presents results for photocurrent induced by a X flash, for the latchup and burnout induced in MOS devices by heavy ions.
  • Keywords
    Analytical models; Computer simulation; Diodes; Impact ionization; Ionizing radiation; Photoconductivity; Power generation; Predictive models; Pulse generation; Radiation hardening;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Conference_Location
    The Hague, The Netherlands
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5435886
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513644