DocumentCode
513646
Title
2-D Modeling of Electronic Noise in Semiconductor Devices
Author
Houlet, P. ; Bonani, F. ; Ghione, G. ; Varani, L. ; Aboubacar, M. ; Vaissiere, J.C. ; Nougier, J.P. ; Starikov, E. ; Gruzhinskis, V. ; Shiktorov, P.
Author_Institution
Dipartimento di Elettronica, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy; Centre d´´Electronique et de Microopto?lectronique de Montpellier, Universit? Montpellier II, 34095 Montpellier C?dex 5, France; Department of Electronic
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
965
Lastpage
968
Abstract
We present two deterministic approaches for the calculation of electronic noise in semiconductor devices. Both approaches are based on the calculation of the impedance field. The former (transfer impedance) is applied to 1D Si p+pp+ diodes in the framework of drift-diffusion, hydrodynamic and scattered packet methods. The later (Langevin) is checked on the same diodes and applied to Si MESFETs in the framework of drift-diffusion method.
Keywords
Density measurement; Hydrodynamics; Impedance measurement; Noise measurement; Power measurement; Scattering; Semiconductor device noise; Semiconductor devices; Semiconductor diodes; Voltage fluctuations;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5435890
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