DocumentCode :
513648
Title :
A 2/3´´ 1k*1k FT-CCD Imager with High Charge-Handling Capacity by Use of the P2-CCD Principle
Author :
Kleimann, Agnes ; Bosiers, Jan ; Schaeffer, Chris
Author_Institution :
Philips Imaging Technology, M.S. WAG11, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
fYear :
1995
fDate :
25-27 Sept. 1995
Firstpage :
335
Lastpage :
338
Abstract :
For many machine-vision and scientific applications, a high-resolution CCD imager with square pixels and operating in progressive-scan mode is required, because in many applications with fast moving scenes the time offset of image capture between the two interlaced fields of conventional broadcast-oriented imagers is unacceptable. The aim of this work was to modify the pixel of an existing interlaced 1024(H) × 512(V) FT-CCD imager into a progressive scan 1024 × 1024 pixel device, operating at 30 full frames per second with only minor modifications. Because of technical and commercial requirements, the new progressive scan CCD has to fit into the existing camera module for the interlaced device with minimal changes of the electronics. Thus a true progressive scan high-resolution CCD imager was developed, with pixel dimensions of 7.5 × 7.5 ¿m2 and a high charge-handling capacity (Qmax) of 80 000 electrons per pixel, that can replace the interlaced device. By splitting the existing 4-phase CCD pixel with vertical anti-blooming (VAB) into two 4-phase pixels with an additional profiled-peristaltic (p2) implant, only minor changes in the camera electronics are required. This shallow arsenic P2-implant provides a shallow but deep potential well, so that a larger charge packet can be stored. The performance parameters, such as optical sensitivity, charge transfer efficiency, VAB and electronic shutter, of the progressive imager are almost identical to those of the interlaced device. The Qmax of the new P2-CCD is more than doubled compared to the conventional 2-phase approach for achieving progressive scan.
Keywords :
Broadcasting; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Electrons; Implants; Layout; Optical sensors; Pixel; Potential well;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
Print_ISBN :
286332182X
Type :
conf
Filename :
5435892
Link To Document :
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