DocumentCode
513652
Title
A Straightforward Noise De-Embedding Method and its Application to High-Speed Silicon Bipolar Transistors
Author
Aufinger, K. ; Böck, J.
Author_Institution
SIEMENS AG, Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, 81739 Munich, Germany
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
957
Lastpage
960
Abstract
In this paper it is shown how commonly used de-embedding strategies for on-wafer s-parameter measurements are extended to noise characterization without any additional measuremnt or modelling effort. To illustrate the procedure, it is applied to high-speed Si bipolar transistors. For down-scaled devices a significant influence of the surrounding parasitics is found.
Keywords
Admittance; Bipolar transistors; Circuit noise; Impedance; Matrix converters; Noise figure; Noise measurement; Scattering parameters; Semiconductor device measurement; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5435896
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