DocumentCode :
513673
Title :
New 3D Polycrystalline Model of Electromigration Induced Voiding at Interconnect Vias
Author :
Ghiti, A. ; O´Neill, A.G. ; Low, K.S. ; Trattles, J.T.
Author_Institution :
Department of Electrical and Electronic Engineering, Merz Court, University of Newcastle, Newcastle upon-Tyne NE1 7RU, UK
fYear :
1996
fDate :
9-11 Sept. 1996
Firstpage :
913
Lastpage :
916
Abstract :
A new three-dimensional computer model for investigating electromigration induced voiding in the presence of multilevel interconnection vias is presented. The model uses the finite element method to obtain the temperature and current density distributions and includes the polycrystalline grain structure of the tracks. It is found that in addition to the effects of hot spots, current crowding and microstructure, the anisotropy of the grain boundary diffusion plays an important role in determining the locations of void formation.
Keywords :
Anisotropic magnetoresistance; Conductors; Current density; Electromigration; Finite element methods; Grain boundaries; Legged locomotion; Microstructure; Proximity effect; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
Print_ISBN :
286332196X
Type :
conf
Filename :
5435923
Link To Document :
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