• DocumentCode
    513682
  • Title

    Modelling of Two-Section Transparent In-Line Detector Structures, based on GaInAsP Semiconductor Laser Amplifiers

  • Author

    Pleumeekers, Jacco L. ; Mercier, Thierry

  • Author_Institution
    Delft University of Technology, Faculty of Electrotechnical Engineering, Mekelweg 4, Delft, The Netherlands
  • fYear
    1995
  • fDate
    25-27 Sept. 1995
  • Firstpage
    455
  • Lastpage
    458
  • Abstract
    It is commonly believed that optical amplifiers will play a key role in future telecommunication networks. There are two main types of optical amplifiers. One is an Erbium doped fibre amplifier (EDFA) and the other is a semiconductor laser amplifier (SLA). The advantages of SLA´s are their ease of integration with other integrated optical components and their multifunctionality. Among the optical functions that an SLA can perform are amplification, amplitude modulation, phase modulation, detection and wavelength conversion. This paper will concentrate on the modelling and simulation of SLA´s used as transparent in-line detectors in optical ring-networks. A software tool will be presented that includes large-signal time-dependent analysis, multiple optical input signals, amplified spontaneous emission, multi-section devices and residual mirror reflection.
  • Keywords
    Doped fiber amplifiers; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Laser modes; Optical amplifiers; Optical modulation; Optical wavelength conversion; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Conference_Location
    The Hague, The Netherlands
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5435933