DocumentCode :
513682
Title :
Modelling of Two-Section Transparent In-Line Detector Structures, based on GaInAsP Semiconductor Laser Amplifiers
Author :
Pleumeekers, Jacco L. ; Mercier, Thierry
Author_Institution :
Delft University of Technology, Faculty of Electrotechnical Engineering, Mekelweg 4, Delft, The Netherlands
fYear :
1995
fDate :
25-27 Sept. 1995
Firstpage :
455
Lastpage :
458
Abstract :
It is commonly believed that optical amplifiers will play a key role in future telecommunication networks. There are two main types of optical amplifiers. One is an Erbium doped fibre amplifier (EDFA) and the other is a semiconductor laser amplifier (SLA). The advantages of SLA´s are their ease of integration with other integrated optical components and their multifunctionality. Among the optical functions that an SLA can perform are amplification, amplitude modulation, phase modulation, detection and wavelength conversion. This paper will concentrate on the modelling and simulation of SLA´s used as transparent in-line detectors in optical ring-networks. A software tool will be presented that includes large-signal time-dependent analysis, multiple optical input signals, amplified spontaneous emission, multi-section devices and residual mirror reflection.
Keywords :
Doped fiber amplifiers; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Laser modes; Optical amplifiers; Optical modulation; Optical wavelength conversion; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
Print_ISBN :
286332182X
Type :
conf
Filename :
5435933
Link To Document :
بازگشت