DocumentCode
513682
Title
Modelling of Two-Section Transparent In-Line Detector Structures, based on GaInAsP Semiconductor Laser Amplifiers
Author
Pleumeekers, Jacco L. ; Mercier, Thierry
Author_Institution
Delft University of Technology, Faculty of Electrotechnical Engineering, Mekelweg 4, Delft, The Netherlands
fYear
1995
fDate
25-27 Sept. 1995
Firstpage
455
Lastpage
458
Abstract
It is commonly believed that optical amplifiers will play a key role in future telecommunication networks. There are two main types of optical amplifiers. One is an Erbium doped fibre amplifier (EDFA) and the other is a semiconductor laser amplifier (SLA). The advantages of SLA´s are their ease of integration with other integrated optical components and their multifunctionality. Among the optical functions that an SLA can perform are amplification, amplitude modulation, phase modulation, detection and wavelength conversion. This paper will concentrate on the modelling and simulation of SLA´s used as transparent in-line detectors in optical ring-networks. A software tool will be presented that includes large-signal time-dependent analysis, multiple optical input signals, amplified spontaneous emission, multi-section devices and residual mirror reflection.
Keywords
Doped fiber amplifiers; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Laser modes; Optical amplifiers; Optical modulation; Optical wavelength conversion; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location
The Hague, The Netherlands
Print_ISBN
286332182X
Type
conf
Filename
5435933
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