Array-Like Metal-Resistance-Semiconductor Photodetectors: Characterization and Modelling

This paper reports the experimental characterisation of Metal-Resistance-Semiconductor devices. The effect of the confinement of the current around the seeding point is discussed and a complete device model is presented. The resistive layer improves the performance of the device and enables an array-like parallel detection of many photons. The advantages are: a reduced electronics complexity, no blind-zone, and uniform sensitivity.