Title :
Band-Band Tunneling in High-Voltage Varactor Diodes
Author :
Buyk, O.J.A. ; Huisman, F.R.J. ; Hurkx, G.A.M.
Author_Institution :
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Abstract :
This paper discusses the reverse I-V characteristics of hyperabrupt silicon varactor diodes designed to have a high capacitance per unit area. These diodes may exhibit a reverse current which is dominated by band-band tunneling, although their breakdown voltage is much higher than 6Eg/q, where 6Eg is the bandgap of silicon.
Keywords :
Breakdown voltage; Capacitance; Impurities; Leakage current; Photonic band gap; Semiconductor diodes; Silicon; Temperature dependence; Tunneling; Varactors;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
