Title :
Suppression of the Parasitic Bipolar Transistor in Deep Sub-Micron MOSFETs by the Use of a Narrow Band-Gap, SiGe Source
Author :
Wu, Z.Y. ; Hall, S. ; Eccleston, W.
Author_Institution :
Department of Electrical Engineering and Electronics, The University of Liverpool, Liverpool L69 3BX, U.K.
Abstract :
We demonstrate here the principle of the application of reverse heterojunction engineering for the suppression of the parasitic bipolar transistor in deep sub-micron MOSFETs. Simulation results using the TMA-MEDICI package, based on a deep sub-micron vertical MOSFET structure, demonstrated the efficacy of using a narrow band-gap SiGe source. The breakdown voltage induced by the parasitic bipolar can be increased by up to 60% with a SiGe source of only 10% Ge.
Keywords :
Bipolar transistors; Breakdown voltage; Doping; Electronics packaging; Feedback; Germanium silicon alloys; Heterojunctions; MOSFETs; Photonic band gap; Silicon germanium;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
