Title :
Noise Characteristics of Bipolar Transistors Fabricated in an Advanced Bipolar Technology
Author :
Aufinger, K. ; Bock, J. ; Meister, T.F. ; Popp, J.
Author_Institution :
SIEMENS AG, Corporate Research and Development, Microelectronics, Munich, Germany; Institut fÿr Theoretische Physik, Leopold-Franzens-Universitÿt Innsbruck, Austria
Abstract :
The RF noise properties of an advanced silicon bipolar technology are investigated. The influence of the lateral scaling on the noise figure is studied experimentally and compared with the predictions of conventional noise modeling. The potential of the technology is demonstrated by noise figures below 1 dB for frequencies up to 2 GHz and below 2 dB up to 7 GHz.
Keywords :
Bipolar transistors; Circuit noise; Cutoff frequency; Frequency measurement; Impedance; Integrated circuit noise; Noise figure; Noise measurement; Predictive models; Silicon;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
