• DocumentCode
    513692
  • Title

    Noise Characteristics of Bipolar Transistors Fabricated in an Advanced Bipolar Technology

  • Author

    Aufinger, K. ; Bock, J. ; Meister, T.F. ; Popp, J.

  • Author_Institution
    SIEMENS AG, Corporate Research and Development, Microelectronics, Munich, Germany; Institut fÿr Theoretische Physik, Leopold-Franzens-Universitÿt Innsbruck, Austria
  • fYear
    1995
  • fDate
    25-27 Sept. 1995
  • Firstpage
    491
  • Lastpage
    494
  • Abstract
    The RF noise properties of an advanced silicon bipolar technology are investigated. The influence of the lateral scaling on the noise figure is studied experimentally and compared with the predictions of conventional noise modeling. The potential of the technology is demonstrated by noise figures below 1 dB for frequencies up to 2 GHz and below 2 dB up to 7 GHz.
  • Keywords
    Bipolar transistors; Circuit noise; Cutoff frequency; Frequency measurement; Impedance; Integrated circuit noise; Noise figure; Noise measurement; Predictive models; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Conference_Location
    The Hague, The Netherlands
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5435948
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513692