• DocumentCode
    513697
  • Title

    High Performance 0.1-μm-Self-Aligned-Gate GaAs MESFET Technology

  • Author

    Nishimura, Kazumi ; Onodera, Kiyomitsu ; Aoyama, Shinji ; Tokumitsu, Masami ; Yamasaki, Kimiyoshi

  • Author_Institution
    NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa Pref., 243-01 Japan
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    865
  • Lastpage
    868
  • Abstract
    We report on 0.1-μm Au/WSiN-gate GaAs MESFET technology. We demonstrate FET uniformity in a wafer and excellent high-frequency performance; the standard deviation of the threshold voltages is 0.058 V and the current-gain-cutoff-frequency (fT ) is 140 GHz.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5435956
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513697