Title :
High Performance 0.1-μm-Self-Aligned-Gate GaAs MESFET Technology
Author :
Nishimura, Kazumi ; Onodera, Kiyomitsu ; Aoyama, Shinji ; Tokumitsu, Masami ; Yamasaki, Kimiyoshi
Author_Institution :
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa Pref., 243-01 Japan
Abstract :
We report on 0.1-μm Au/WSiN-gate GaAs MESFET technology. We demonstrate FET uniformity in a wafer and excellent high-frequency performance; the standard deviation of the threshold voltages is 0.058 V and the current-gain-cutoff-frequency (fT ) is 140 GHz.
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
