A Lateral Bipolar Transistor on SOI Fabricated by a Direct-Write Sub-100-nm Electron Beam Lithography

Author

Sauter, M. ; Bertagnolli, E. ; Knapek, E. ; Stemmer, A. ; Froschle, B. ; Eisele, I. ; Klose, H.

Author_Institution

Siemens AG, Corp. Research and Development, Otto-Hahn-Ring 6, 81737 Munich, Germany; Fraunhofer Institute for Solid-State-Technology, Hansastr. 27 d, 80686 Munich, Germany. Tel. 0049-89-636-47036

fYear

1995

fDate

25-27 Sept. 1995

Firstpage

229

Lastpage

232

Abstract

A direct-write sub-100-nm electron beam lithography has been used to fabricate a novel lateral bipolar transistor on SOI. Downscaling of base widths into the sub-100-nm-regime could be successfully demonstrated. An innovative, high-temperature-stable W/TiN/Ti metallisation was used to enable base implantation and activation after metal deposition. The devices are characterised by electrical measurements, process simulation is used to estimate the effects of process parameters on the resulting base width. The influence of scaling on device performance is discussed, a relation for base formation is derived.

Keywords

Bipolar transistors; Capacitance measurement; Current measurement; Electric variables measurement; Electron beams; Energy measurement; Lithography; Metallization; Resists; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European

Conference_Location

The Hague, The Netherlands

Print_ISBN

286332182X

Type

conf

Filename

5435960