Title :
Kinetics of Hot-Carrier Degradation of Submicron n-Channel LDD MOSFET´s
Author :
Okhonin, S. ; Hessler, T. ; Dutoit, M.
Author_Institution :
Institute for Micro- and Optoelectronics, Swiss Federal Institute of Technology, CH 1015 Lausanne, Switzerland
Abstract :
A model of the impact of hot-carrier-induced interface traps on the electrical characteristics of MOSFET was developed. The measured interface trap profile was used to explain the reduction of drain current and maximum transconductance.
Keywords :
Current measurement; Degradation; Electrical resistance measurement; Hot carriers; Immune system; Kinetic theory; MOSFET circuits; Stress; Threshold voltage; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
