DocumentCode
513703
Title
Kinetics of Hot-Carrier Degradation of Submicron n-Channel LDD MOSFET´s
Author
Okhonin, S. ; Hessler, T. ; Dutoit, M.
Author_Institution
Institute for Micro- and Optoelectronics, Swiss Federal Institute of Technology, CH 1015 Lausanne, Switzerland
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
855
Lastpage
858
Abstract
A model of the impact of hot-carrier-induced interface traps on the electrical characteristics of MOSFET was developed. The measured interface trap profile was used to explain the reduction of drain current and maximum transconductance.
Keywords
Current measurement; Degradation; Electrical resistance measurement; Hot carriers; Immune system; Kinetic theory; MOSFET circuits; Stress; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5435962
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