Title :
A SOI 0.1 μm Epitaxial-Channel MOSFET
Author :
Dudek, V. ; Appel, W. ; Beer, L. ; Hofflinger, B.
Author_Institution :
Institute for Microelectronics Stuttgart, Allmandring 30 A, 70569 Stuttgart, Germany
Abstract :
Silicon MOS transistors on oxide with 0.1 μm channel length have been produced by reduced-temperature, in-situ doped selective epitaxy. Together with a 6nm oxinitride gate dielectric, an intrinsic transconductance of up to 700 mS/mm was obtained at room temperature, equivalent to a maximum electron velocity of 1,3 × 107 cm/s. This novel SOI-MOSFET technology is free of equipment constraints like those for gate lithography and it offers freedom of process design towards robust ultra-high-speed silicon MOSFET´s.
Keywords :
Dielectrics; Electrons; Epitaxial growth; Lithography; MOSFET circuits; Process design; Robustness; Silicon; Temperature; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
