• DocumentCode
    513710
  • Title

    Impact of Fast Interface States on Effective Mobility of Heavily-Doped MOSFET´s

  • Author

    Perron, L. ; Lacaita, A. ; Guzzetti, S. ; Bez, R.

  • Author_Institution
    Politecnico di Milano, Dipartimento di Elettronica e Informazione and CEQSE-CNR, Piazza L. da Vinci 32 - 20133 Milano, Italy
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    833
  • Lastpage
    836
  • Abstract
    We show that for MOSFET´s with a heavily doped channel, the well-established experimental procedure for measurement of electron mobility is affected by a systematic error. Due to quantization of electron states in the channel, interface traps close to the conduction-band edge contribute significantly to the gate-channel capacitance, leading to underestimate the mobility in the near-threshold region.
  • Keywords
    Capacitance; Charge measurement; Current measurement; Doping; Electron mobility; Electron traps; Interface states; MOSFET circuits; Microelectronics; Quantization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5435974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513710