DocumentCode
513714
Title
Study of Low-Temperature Degradation of AlGaAs/InGaAs Pseudomorphic HEMT´s
Author
Meneghesso, Gaudenzio ; Haddab, Youcef ; De Bortoli, Eros ; Paccagnella, Alessandro ; Zanoni, Enrico ; Canali, Claudio
Author_Institution
Universitá di Padova, Dipartimento di Elettronica e Informatica via Gradenigo 6/A 35131 Padova Italy.
fYear
1995
fDate
25-27 Sept. 1995
Firstpage
169
Lastpage
172
Abstract
AlGaAs/InGaAs PM-HEMT´s DC behaviour has been investigated at low temperature. Depending on the bias conditions a remarkable collapse of the drain current, ID , or a considerable shift in the threshold voltage VT have been observed. A complete recovery of the I-V curve has been observed at high values of the applied bias. Trapping and detrapping (by impact ionization) of electrons in deep levels present in the gate-to-drain region and under the gate are responsible for the observed behaviour.
Keywords
Degradation; Electron mobility; Electron traps; Gallium arsenide; HEMTs; Indium gallium arsenide; PHEMTs; Stress measurement; Temperature dependence; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location
The Hague, The Netherlands
Print_ISBN
286332182X
Type
conf
Filename
5435981
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