GaN based Heterostructure Field Effect Transistors for Temperature Resistant Device Operation

Demand for temperature resistant semiconductor and circuit operation has reached significant levels in recent years. This paper describes the results of numerical simulation used to study the high temperature operation of heterojunction transistors incorporating wider band gap Gallium Nitride layers. Orders of magnitude reduction in drain an gate leakage current have been demonstrated over conventional III-V materials at temperatures exceeding 500°C.