Title :
Self-Aligned Metal/IDP Si Bipolar Technology with 12-ps ECL and 45-GHz Dynamic Frequency Divider
Author :
Washio, Katsuyoshi ; Ohue, Eiji ; Tanabe, Masamichi ; Onai, Takahiro
Author_Institution :
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo Kokubunji, Tokyo 185, Japan
Abstract :
A self-aligned stacked metal/IDP (SMI) Si bipolar transistor technology that offers low base resistance with shallow impurity profiles is described. This technology makes it possible to obtain ultra-high-speed operation with a 12-ps gate-delay ECL and a 45-GHz dynamic frequency divider. These measured data are the best yet reported for Si technology.
Keywords :
Capacitance; Contact resistance; Cutoff frequency; Electrodes; Fabrication; Frequency conversion; Laboratories; Space technology; Thermal resistance; Tungsten;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
