Title :
Electrical Characteristics of B+ and BF2+ Implanted Poly-Si and Poly-GexSi1-x as Gate Material for Sub-0.25μm Applications
Author :
Salm, C. ; van Veen, D.T. ; Holleman, J. ; Woerlee, P.H.
Author_Institution :
MESA Research Institute, University of Twente, Dept.of Electrical Engineering, P.O Box 217, 7500 AE Enschede, The Netherlands
Abstract :
The electrical properties of p-type doped poly-Si and poly-GexSi1-x, (x˜0.3) gate material were studied. The effect of dopant concentration and anneal temperature on the electrical behavior of these polycrystalline layers is investigated. A lower sheet resistance, higher Hall mobility and higher dopant activation is found for GexSi1-x compared to Si at equal doping levels. MOS capacitors with B+ and BF2+ implanted gates were used to study boron penetration. Boron penetration is similar for Ge0.3Si0.7 and Si. Gate depletion is dependent on the dopant activation hence GexSi1-x offers the possibility for lower gate depletion compared to Si.
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
