• DocumentCode
    513723
  • Title

    Electrical Characteristics of B+ and BF2+ Implanted Poly-Si and Poly-GexSi1-x as Gate Material for Sub-0.25μm Applications

  • Author

    Salm, C. ; van Veen, D.T. ; Holleman, J. ; Woerlee, P.H.

  • Author_Institution
    MESA Research Institute, University of Twente, Dept.of Electrical Engineering, P.O Box 217, 7500 AE Enschede, The Netherlands
  • fYear
    1995
  • fDate
    25-27 Sept. 1995
  • Firstpage
    131
  • Lastpage
    134
  • Abstract
    The electrical properties of p-type doped poly-Si and poly-GexSi1-x, (x˜0.3) gate material were studied. The effect of dopant concentration and anneal temperature on the electrical behavior of these polycrystalline layers is investigated. A lower sheet resistance, higher Hall mobility and higher dopant activation is found for GexSi1-x compared to Si at equal doping levels. MOS capacitors with B+ and BF2+ implanted gates were used to study boron penetration. Boron penetration is similar for Ge0.3Si0.7 and Si. Gate depletion is dependent on the dopant activation hence GexSi1-x offers the possibility for lower gate depletion compared to Si.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Conference_Location
    The Hague, The Netherlands
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5435993
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513723