Title :
Large - Angle - Tilt - Implanted - Base (LATIB) for Walled - Emitter Bipolar Transistors
Author :
Niel, S. ; Gravier, T. ; Granier, A. ; Grouillet, A. ; Kirtsch, J. ; Chantre, A. ; Vincent, G.
Author_Institution :
France Telecom, CNET Grenoble, BP98, F-38243 Meylan Cedex, France
Abstract :
This paper reports the development of a large-angle-tilt-implanted-base (LATIB) module to improve the reliability of walled-emitter bipolar transistors. The validity of this concept is demonstrated using static and high frequency measurements performed on LATIB devices fabricated using a 200mm 0.5¿m BiCMOS technology.
Keywords :
BiCMOS integrated circuits; Bipolar transistors; Capacitance; Dry etching; Electrical resistance measurement; Frequency measurement; Implants; Isolation technology; Performance evaluation; Telecommunications;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
