• DocumentCode
    513725
  • Title

    Large - Angle - Tilt - Implanted - Base (LATIB) for Walled - Emitter Bipolar Transistors

  • Author

    Niel, S. ; Gravier, T. ; Granier, A. ; Grouillet, A. ; Kirtsch, J. ; Chantre, A. ; Vincent, G.

  • Author_Institution
    France Telecom, CNET Grenoble, BP98, F-38243 Meylan Cedex, France
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    799
  • Lastpage
    802
  • Abstract
    This paper reports the development of a large-angle-tilt-implanted-base (LATIB) module to improve the reliability of walled-emitter bipolar transistors. The validity of this concept is demonstrated using static and high frequency measurements performed on LATIB devices fabricated using a 200mm 0.5¿m BiCMOS technology.
  • Keywords
    BiCMOS integrated circuits; Bipolar transistors; Capacitance; Dry etching; Electrical resistance measurement; Frequency measurement; Implants; Isolation technology; Performance evaluation; Telecommunications;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5435995
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513725