Title :
Low Power Consumption DC-18 GHz Internally Matched Amplifier using Si/SiGe HBTs
Author :
Gruhle, A. ; Schumacher, H. ; Erben, U. ; Kibbel, H. ; Konig, U.
Author_Institution :
Daimler-Benz AG, Wilhelm-Runge-Str. 11, D-89075 Ulm, Germany
Abstract :
Very wideband amplifiers with low input and output reflection coefficients are important building blocks for applications ranging from high-bitrate fiberoptic communication systems to advanced radar. Low power consumption, small chip area and low manufacturing cost become priority issues for battery-operated mobile devices and large market volume systems. Si/SiGe HBTs with highly doped base layers are uniquely qualified to address these issues. In this paper, we present a monolithically integrated wideband amplifier using SiGe HBTs. It provides 9.5 dB of gain with 18 GHs bandwidth, while drawing only 50 mW from a 3V supply. The phase delay varies linearly with frequency within the operating bandwidth, making this amplifier equally well suited for high-speed digital applications. The noise figure was 5.3 dB over the bandwidth of the amplifier.
Keywords :
Bandwidth; Broadband amplifiers; Energy consumption; Germanium silicon alloys; Manufacturing; Optical fiber communication; Optical fiber devices; Radar applications; Reflection; Silicon germanium;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
