Title :
A Si Power MOS Amplifier for PCN Mobile Telephones
Author :
Yoshida, Isao ; Katsueda, Mineo ; Sekine, Kenji ; Nagata, Minoru
Author_Institution :
Semiconductor & Integrated Circuits Div., Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
Abstract :
A 1.8-GHz-band Si power MOS hybrid IC (module) with 42% overall efficiency, 2-W output power, and 26-dB power gain at a 4.8-V supply voltage has been developed for high-power amplifiers of PCN cellular telephones. New parallel operation using impedance-matching circuit enables this high efficiency and power module at high frequency and low supply voltage, which uses 0.7 ¿m-gate-length and 16-mm-gate-width power MOSFETs.
Keywords :
Frequency; High power amplifiers; Hybrid integrated circuits; Impedance; Multichip modules; Personal communication networks; Power amplifiers; Power generation; Telephony; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
