DocumentCode
513734
Title
A Si Power MOS Amplifier for PCN Mobile Telephones
Author
Yoshida, Isao ; Katsueda, Mineo ; Sekine, Kenji ; Nagata, Minoru
Author_Institution
Semiconductor & Integrated Circuits Div., Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
fYear
1995
fDate
25-27 Sept. 1995
Firstpage
97
Lastpage
100
Abstract
A 1.8-GHz-band Si power MOS hybrid IC (module) with 42% overall efficiency, 2-W output power, and 26-dB power gain at a 4.8-V supply voltage has been developed for high-power amplifiers of PCN cellular telephones. New parallel operation using impedance-matching circuit enables this high efficiency and power module at high frequency and low supply voltage, which uses 0.7 ¿m-gate-length and 16-mm-gate-width power MOSFETs.
Keywords
Frequency; High power amplifiers; Hybrid integrated circuits; Impedance; Multichip modules; Personal communication networks; Power amplifiers; Power generation; Telephony; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location
The Hague, The Netherlands
Print_ISBN
286332182X
Type
conf
Filename
5436005
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