• DocumentCode
    513735
  • Title

    MINIMOS-NT: A Generic Simulator for Complex Semiconductor Devices

  • Author

    Simlinger, T. ; Kosina, H. ; Rottinger, M. ; Selberherr, S.

  • Author_Institution
    Institute for Microelectronics, TU Vienna, GuÃ\x9fhausstraÃ\x9fe 27-29, A-1040 Vienna, Austria. Phone +43/1/58801-3713, FAX +43/1/5059224
  • fYear
    1995
  • fDate
    25-27 Sept. 1995
  • Firstpage
    83
  • Lastpage
    86
  • Abstract
    MINIMOS-NT, a generic device simulator is presented. This simulator is capable of dealing with complex device geometries as well as with several physical models represented by certain sets of partial differential equations. A description of the structure of the simulator is given, which shows the basic idea of splitting the device geometry in distinct regions. Within these ``segments´´, arbitrary material properties and physical models, i.e. partial differential equations, can be defined independently. The segments are linked together by interface models which account for the interface conditions. The emerging linear system can be solved by a Gauß-solver or by a state-of-the-art BiCGStab algorithm. Two examples, an n-channel CCD and a quarter micron low-noise HEMT, conclude the explanations.
  • Keywords
    Charge coupled devices; Geometry; HEMTs; Hydrodynamics; Iterative algorithms; Linear systems; Object oriented modeling; Partial differential equations; Semiconductor devices; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Conference_Location
    The Hague, The Netherlands
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5436006