Title :
MINIMOS-NT: A Generic Simulator for Complex Semiconductor Devices
Author :
Simlinger, T. ; Kosina, H. ; Rottinger, M. ; Selberherr, S.
Author_Institution :
Institute for Microelectronics, TU Vienna, GuÃ\x9fhausstraÃ\x9fe 27-29, A-1040 Vienna, Austria. Phone +43/1/58801-3713, FAX +43/1/5059224
Abstract :
MINIMOS-NT, a generic device simulator is presented. This simulator is capable of dealing with complex device geometries as well as with several physical models represented by certain sets of partial differential equations. A description of the structure of the simulator is given, which shows the basic idea of splitting the device geometry in distinct regions. Within these ``segments´´, arbitrary material properties and physical models, i.e. partial differential equations, can be defined independently. The segments are linked together by interface models which account for the interface conditions. The emerging linear system can be solved by a GauÃ-solver or by a state-of-the-art BiCGStab algorithm. Two examples, an n-channel CCD and a quarter micron low-noise HEMT, conclude the explanations.
Keywords :
Charge coupled devices; Geometry; HEMTs; Hydrodynamics; Iterative algorithms; Linear systems; Object oriented modeling; Partial differential equations; Semiconductor devices; Solid modeling;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands