DocumentCode
513735
Title
MINIMOS-NT: A Generic Simulator for Complex Semiconductor Devices
Author
Simlinger, T. ; Kosina, H. ; Rottinger, M. ; Selberherr, S.
Author_Institution
Institute for Microelectronics, TU Vienna, GuÃ\x9fhausstraÃ\x9fe 27-29, A-1040 Vienna, Austria. Phone +43/1/58801-3713, FAX +43/1/5059224
fYear
1995
fDate
25-27 Sept. 1995
Firstpage
83
Lastpage
86
Abstract
MINIMOS-NT, a generic device simulator is presented. This simulator is capable of dealing with complex device geometries as well as with several physical models represented by certain sets of partial differential equations. A description of the structure of the simulator is given, which shows the basic idea of splitting the device geometry in distinct regions. Within these ``segments´´, arbitrary material properties and physical models, i.e. partial differential equations, can be defined independently. The segments are linked together by interface models which account for the interface conditions. The emerging linear system can be solved by a GauÃ-solver or by a state-of-the-art BiCGStab algorithm. Two examples, an n-channel CCD and a quarter micron low-noise HEMT, conclude the explanations.
Keywords
Charge coupled devices; Geometry; HEMTs; Hydrodynamics; Iterative algorithms; Linear systems; Object oriented modeling; Partial differential equations; Semiconductor devices; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location
The Hague, The Netherlands
Print_ISBN
286332182X
Type
conf
Filename
5436006
Link To Document