Title :
Low Temperature Dependence of the Device Parameters of Separate Absorption, Grading, Charge and Multiplication InP/InGaAs Avalanche Photodiodes
Author :
An, S. ; Deen, MJ ; Tarof, L.
Author_Institution :
School of Engineering Science, Simon Fraser University, Burnaby, B.C. Canada V5A 1S6
Abstract :
Temperature dependent studies of planar Separate Absorption, Grading, Charge and Multiplication (SAGCM) avalanche photodiodes (APD´s) in the range of 4.7 to 300K were conducted. From the measured breakdown (VBR) and punchthrough (VMESA) voltages, we extracted the following device parameters - total active charge density in the active central region (¿), electron (¿) and hole (ß) ionization coefficients, multiplication coefficient (ß/¿), depletion voltage (Vdepleted), and electric field distribution as a function of low temperatures.
Keywords :
Absorption; Avalanche photodiodes; Breakdown voltage; Charge measurement; Current measurement; Density measurement; Indium gallium arsenide; Indium phosphide; Temperature dependence; Temperature distribution;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
