Title :
BCD Technologies for VLSI Smart Power ICs
Author :
Contiero, Claudio
Author_Institution :
SGS-THOMSON Microelectronics, Via Tolomeo 1, 20010 Cornaredo (Milano), ITALY
Abstract :
This paper describes a smart power bipolar-CMOS-DMOS (BCD) technology called BCD III designed at 1.2¿ for single chip system integration. This technology, besides providing bipolar, CMOS and DMOS functions, offers the possibility to implement on the same chip EPROM and EEPROM non-volatile memories. A practical example of a complete system realized in a single chip solution using BCD III is also reported.
Keywords :
CMOS logic circuits; CMOS technology; EPROM; Integrated circuit technology; Isolation technology; Power integrated circuits; Space technology; Thermal resistance; Very large scale integration; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
