Title :
Novel MSM-2DEG PD/HEMT Photoreceiver for 10Gbit/s Operation
Author :
Horstmann, M. ; Muttersbach, J. ; van der Hart, A. ; Schimpf, K. ; Marso, M. ; Kordos, P. ; Lüth, H.
Author_Institution :
Institute of Thin Film and Ion Technology, Research Centre Jÿlich, D-52425 Jÿlich
Abstract :
A monolithic integrated photoreceiver for 10Gbit/s long-haul optoelectronic transmission systems is presented. The photoreceiver consists of a MSM photodetector and a HEMT amplifier, prepared on an identical InGaAs/InP 2DEG layer structure. The design considerations, preparation procedure and electronic properties of discrete devices and results on a front-end receiver at 1.3¿m wavelength are presented. The MSM-2DEG photodetector exhibits a 0.21A/W responsivity and a 16GHz bandwidth. The HEMT amplifiers have 45/85GHz fT/fmax. A bandwidth of 7GHz is measured on a front-end photoreceiver circuit.
Keywords :
Absorption; Bandwidth; Circuits; Epitaxial growth; HEMTs; Indium gallium arsenide; Indium phosphide; Insulation; Photodetectors; Substrates;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
