Title :
The State of the Art and Future Trends in DRAMs
Author :
Hwang, C.G. ; Lee, S.I. ; Lee, M.Y.
Author_Institution :
R & D Center, Semiconductor Business, SAMSUNG Electronics Co. Ltd., San # 24, Nongseo-Lee, Kiheung Eup, Yongin-Gun, Kyungki-Do, Korea
Abstract :
The production of future generation DRAM devices critically requires R&D of process technologies for highly integrable and cost effective processes. Also, in order to support the ever-increasing requirements for high performance operation, the future DRAM products should be equipped with the capabilities of low voltage operation and high speed, too. This paper presents overview of process technology for deep sub-micron devices such as 256 Mbit DRAM based upon current research data and giga bit DRAM.
Keywords :
Costs; High speed optical techniques; Optical attenuators; Optical control; Optical films; Optical sensors; Proximity effect; Random access memory; Research and development; Surfaces;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
