Title :
Very-High-Speed Si and SiGe Bipolar ICs
Author_Institution :
Ruhr-University Bochum, AG Halbleiterbauelemente, D-44780 Bochum, Germany
Abstract :
The state-of-the-art for Si based bipolar ICs with respect to maximum operating speed is presented for both the production and laboratory state. Technologies, circuit principles, and design methods successfully used for the development of 10 to 50 Gb/s circuits are discussed. Substantial speed improvements are expected within the next couple of years, assuming the performance potential of SiGe HBTs can be exhausted.
Keywords :
Clocks; Driver circuits; Energy consumption; Frequency; Germanium silicon alloys; High speed optical techniques; Optical amplifiers; Production; Silicon germanium; Zinc;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
