• DocumentCode
    513749
  • Title

    Very-High-Speed Si and SiGe Bipolar ICs

  • Author

    Rein, H.M.

  • Author_Institution
    Ruhr-University Bochum, AG Halbleiterbauelemente, D-44780 Bochum, Germany
  • fYear
    1995
  • fDate
    25-27 Sept. 1995
  • Firstpage
    45
  • Lastpage
    56
  • Abstract
    The state-of-the-art for Si based bipolar ICs with respect to maximum operating speed is presented for both the production and laboratory state. Technologies, circuit principles, and design methods successfully used for the development of 10 to 50 Gb/s circuits are discussed. Substantial speed improvements are expected within the next couple of years, assuming the performance potential of SiGe HBTs can be exhausted.
  • Keywords
    Clocks; Driver circuits; Energy consumption; Frequency; Germanium silicon alloys; High speed optical techniques; Optical amplifiers; Production; Silicon germanium; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Conference_Location
    The Hague, The Netherlands
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5436020
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513749