DocumentCode
513761
Title
Local Potential Measurements in Silicon Devices using Atomic Force Microscopy with Conductive Tips
Author
Trenkler, T. ; De Wolf, P. ; Snauwaert, J. ; Qamhieh, Z. ; Vandervorst, W. ; Hellemans, L.
Author_Institution
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
fYear
1995
fDate
25-27 Sept. 1995
Firstpage
477
Lastpage
481
Abstract
In this paper another application of an Atomic Force Microscope (AFM) using conductive tips is presented: Voltages are applied to the semiconductor structure while a conductive tip is scanned across a cross section of the device. The tip is used as a voltage probe determining the local potential with very high resolution (nm limited by the tip size). Home-made cantilevers have been used to determine both one-and two-dimensional distributions. After a description of the preparation method the promising properties of the technique are demonstrated for simple p-n junctions. Prospectives for charge carrier profiling and electrical characterisation of fully processed devices are discussed.
Keywords
Atomic force microscopy; Atomic measurements; Conductivity measurement; Contacts; Force measurement; Instruments; Probes; Silicon devices; Ultrasonic variables measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location
The Hague, The Netherlands
Print_ISBN
286332182X
Type
conf
Filename
5436039
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