The New Tranzistor Type Nanostructure on the Base of the Controlled Electronic Interference Effects

We have theoretically investigated electronic interference effects in the ballistic conductivity of geometrically uniform 1D and 2D transistor type structures with nonuniform potential relief. It is shown that transmission coefficient |T|² reaches zero value when the particle energy coincides with the energies of quasi-bound states created in the structure with the aid of the controlling electrode.