• DocumentCode
    513782
  • Title

    A Salicided Flash EEPROM for Embedded Memory Applications

  • Author

    Marangon, S. ; Maurelli, A. ; Moroni, M. ; Baldi, L.

  • Author_Institution
    SGS-THOMSON Microelectronics, Via C.Olivetti 2, 20041 Agrate Brianza, Italy
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    697
  • Lastpage
    700
  • Abstract
    Salicide is currently used in sub-half-micron CMOS logic devices, but has not been used till now for Non Volatile Memories, because of reliability concerns. In this paper we report the realisation of a Flash memory cell in a 0.5¿m salicided CMOS process. Writing and erasing characteristics are full comparable with non-salicided technology, and preliminary reliability tests have not shown any major problem.
  • Keywords
    EPROM; Etching; Implants; Logic devices; Microelectronics; Microprocessors; Silicon; Testing; Titanium; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436061
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513782