Title :
Double-Poly EEPROM Cell for High Density Memories using Positive and Negative Voltage Programming
Author :
Pio, F. ; Paruzzi, P. ; Baldi, L. ; Riva, C.
Author_Institution :
SGS-THOMSON Microelectronics, Central R&D, Via C.Olivetti 2 - 20041 AGRATE - ITALY
Abstract :
This paper will present a very compact EEPROM cell for high density applications, featuring split voltage programming. The information is stored in a self-aligned floating-gate transistor with thin (8nm) tunnel oxide. Bit selection is performed by a low-voltage transitor. Long endurance (more than 106 cycles) is achieved and the asymmetric window closing will be explained. The innovative cell concept has been validated on a 256k parallel EEPROM device.
Keywords :
CMOS technology; Character generation; Dielectrics; EPROM; Electron traps; Microelectronics; Nonvolatile memory; Research and development; Stress; Voltage control;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
