• DocumentCode
    513788
  • Title

    Characterization of Sputtered High Dielectric Constant Ba0.5Sr0.5TiO3 Thin Films for DRAM Applications

  • Author

    Sun, S.C. ; Tsai, M.S. ; Lin, P. ; Lay, J.A.

  • Author_Institution
    National Nano Device Laboratory, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    689
  • Lastpage
    692
  • Abstract
    Dielectric and electrical characteristics of (Ba,Sr) TiO3 (BST) thin films prepared by rf-sputtering have been studied. The dielectric constant was observed to increase with increasing oxygen to argon ratio during sputtering. The leakage current also increases with increasing O2/Ar flow ratio. A post deposition rapid thermal annealing was found to be more effective in improving dielectric property for low-temperature deposited films than for high-temperature deposited films.
  • Keywords
    Argon; Binary search trees; Capacitors; Dielectric constant; Dielectric thin films; High-K gate dielectrics; Leakage current; Sputtering; Sun; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436067
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513788