Title :
Characterization of Sputtered High Dielectric Constant Ba0.5Sr0.5TiO3 Thin Films for DRAM Applications
Author :
Sun, S.C. ; Tsai, M.S. ; Lin, P. ; Lay, J.A.
Author_Institution :
National Nano Device Laboratory, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
Abstract :
Dielectric and electrical characteristics of (Ba,Sr) TiO3 (BST) thin films prepared by rf-sputtering have been studied. The dielectric constant was observed to increase with increasing oxygen to argon ratio during sputtering. The leakage current also increases with increasing O2/Ar flow ratio. A post deposition rapid thermal annealing was found to be more effective in improving dielectric property for low-temperature deposited films than for high-temperature deposited films.
Keywords :
Argon; Binary search trees; Capacitors; Dielectric constant; Dielectric thin films; High-K gate dielectrics; Leakage current; Sputtering; Sun; X-ray scattering;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
